Dr. Huang is equipped with professional experience in the nanofabrication of ultra-scaled electronic devices and strong research expertise in the scalable manufacture of low-dimensional materials for advanced electronics. Now, his research focuses on the emerging materials integration of 2D semiconductors, complex oxides (high-κ, memory), and porous coordination polymers (low-κ, sensor) toward the fabrication of future semiconductor technology nodes.
Dr. Huang received his BS in Electrophysics and MS in Photonics from National Chiao Tung University (NCTU) at Taiwan and completed PhD in Material Science and Engineering at the University of New South Wales (UNSW), Australia. Before completing his PhD, he performed R&D work in semiconductors at King Abdullah University of Science and Technology (KAUST, Saudi Arabia), Taiwan Semiconductor Manufacturing Company (TSMC), and National Nano Device Laboratories (Taiwan).
Awards and Achievements
- 2019 “Scientia PhD scholar” UNSW.
Previous Experience
- Apr 2022 - Dec 2022, Lecturer, University of New South Wales.
- Apr 2015 - Dec 2018, Research Specialist, King Abdullah University of Science and Technology.
External Services
Professional Activity
- Jan 2023 - Now, Guest Editor, Micromachines.
- Dec 2022 - Now, Visiting Fellow, University of New South Wales.
- May 2022 - Now, Associate Editor, Frontiers in Electronics.
Selected Publications
- J.-K. Huang, Y. Wan, J. Shi, J. Zhang, Z. Wang, W. Wang, N. Yang, Y. Liu, C.-H. Lin, X. Guan, L. Hu, Z.-L. Yang, B.-C. Huang, Y.-P. Chiu, J. Yang, V. Tung, D. Wang, K. Kalantar-Zadeh, T. Wu, X. Zu, L. Qiao, L.-J. Li and S. Li, “High-κ perovskite membranes as insulators for two-dimensional transistors” Nature 605, 262-267 (2022)
- J.-K. Huang, Y. Wan, J. Shi, J. Zhang, Z. Wang, Z.-L. Yang, B.-C. Huang, Y.-P. Chiu, W. Wang, N. Yang, Y. Liu, C.-H. Lin, X. Guan, L. Hu, J. Yang, D. Wang, V. Tung, K. Kalantar-Zadeh, T. Wu, X. Zu, L. Qiao, S. Li and L.-J. Li, “Crystalline Complex Oxide Membrane: Sub-1 nm CET Dielectrics for 2D Transistors” IEEE International Electron Devices Meeting (IEDM) 7.6.1-7.6.4 (2022)
- A. Azam, J. Yang, W, Li, J.-K. Huang, and S. Li, "Tungsten Diselenides (WSe2) Quantum Dots: Fundamental, Properties, Synthesis and Applications." Progress in Materials Science 132, 101042 (2022)
- Y. Wan, E. Li, Z. Yu, J.-K. Huang, M.-Y. Li, A.-S. Chou, Y.-T. Lee, C.-J. Lee, H.-C. Hsu, Q. Zhan, A. Aljarb, J.-H. Fu, X. Wang, J.-J. Lin, Y.-P. Chiu, W.-H. Chang, H. Wang, Y. Shi, N. Lin, Y. Cheng*, V. Tung and L.-J. Li, “Low-defect-density WS2 by hydroxide vapor phase deposition” Nature Communications 13, 4149 (2022)
- J.-K. Huang, N. Saito, Y. Cai, Y. Wan, C.-C. Cheng, M. Li, J. Shi, K. Tamada, V. C. Tung, S. Li and L.-J. Li, “Steam-Assisted Chemical Vapor Deposition of Zeolitic Imidazolate Framework” ACS Materials Letters 2, 485-491 (2020)
- J.-K. Huang, M. Li, Y. Wan, S. Dey, M. Ostwal, D. Zhang, C.-W. Yang, C.-J. Su, U. S. Jeng, J. Ming, A. Amassian, Z. Lai, Y. Han, S. Li and L.-J. Li, “Functional Two-Dimensional Coordination Polymeric Layer as a Charge Barrier in Li–S Batteries” ACS Nano 12, 836-843 (2018)
- W.-T. Hsu, L.-S. Lu, D. Wang, J.-K. Huang, M.-Y. Li, T.-R. Chang, Y.-C. Chou, Z.-Y. Juang, H.-T. Jeng, L.-J. Li and W.-H. Chang, “Evidence of indirect gap in monolayer WSe2” Nature Communications 8, 929 (2017)
- C. Zhang, Y. Chen, J.-K. Huang, X. Wu, L.-J. Li, W. Yao, J. Tersoff and C.-K. Shih, “Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction” Nature Communications 7, 10349 (2016)
- J.-K. Huang, J. Pu, C.-L. Hsu, M.-H. Chiu, Z.-Y. Juang, Y.-H. Chang, W.-H. Chang, Y. Iwasa, T. Takenobu and L.-J. Li, “Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications” ACS Nano 8, 923-930 (2014).
- W. Zhang, J.-K. Huang, C.-H. Chen, Y.-H. Chang, Y.-J. Cheng and L.-J. Li, “High-Gain Phototransistors Based on a CVD MoS2 Monolayer” Advanced Materials 25, 3456-3461 (2013)
- Y. Shi, J.-K. Huang, L. Jin, Y.-T. Hsu, S. F. Yu, L.-J. Li and H. Y. Yang, “Selective Decoration of Au Nanoparticles on Monolayer MoS2 Single Crystals” Scientific Reports 3, 1839 (2013)
Patents
- J.-K. Huang, J. Shi, J. Zhang, S. Li, “An electronic device and method of forming an electronic device” Australian Provisional application: 2021902514 and 2022900344 (2022).
- M.-Y. Li, J.-K. Huang, L.-J. Li, “Semiconductor device having a lateral semiconductor heterojunction and method” US Patent 1099845B2 (2021).
PhD Opportunities
- Research Focus:
Our research group is at the forefront of exploring the limitless possibilities of low-dimensional materials and metal–organic frameworks. Through innovative experiments and advanced characterization techniques, we aim to unlock their exceptional properties and harness them for next-generation semiconductor applications.
Requirements:
✔️ Hands-on experience in experimental techniques, e.g. chemical vapor deposition, nanofabrication, device characterization.
✔️ Passion for scientific inquiry and a desire to make a significant impact on the field.
✔️ Strong analytical and problem-solving skills, with the ability to think critically.
✔️ Good communication and teamwork abilities.
Scholarship:
Full-time research degree students who have obtained at least a bachelor's degree with upper second-class honors (or equivalent) or a good master's degree are eligible to apply for the scholarship (details). Remarkably talented students are encouraged to apply for the Hong Kong PhD Fellowship Scheme (the application usually opens on Sept 1)
To apply, please email me your updated CV and transcripts with GPA marked for further details and discussion.
Last update date :
12 Jul 2024
